A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology-Reference-Cited by-同舟云学术

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A Monolithic, 500 °C Operational Amplifier in 4H-SiC Bipolar Technology

Published:2014-07 Issue:7 Volume:35 Page:693-695
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Funder

Swedish Foundation for Strategic Research.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/6842713/06817534.pdf?arnumber=6817534

Cited by 61 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes;Advanced Electronic Materials;2024-03-27

3. Wide-Bandgap Semiconductors for Radiation Detection: A Review;Materials;2024-03-01

4. Precision Operational Amplifier on nJFet Arsenide-Gallium Field Effect Transistors and p-n-p Bipolar Transistors;2024 6th International Youth Conference on Radio Electronics, Electrical and Power Engineering (REEPE);2024-02-29

5. Gallium-Arsenide Operational Amplifier without High-Temperature Integrated Resistors;2024 Conference of Young Researchers in Electrical and Electronic Engineering (ElCon);2024-01-29

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