Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species-Reference-Cited by-同舟云学术

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Elimination of carbon vacancies in 4H-SiC epi-layers by near-surface ion implantation: Influence of the ion species

Published:2015-11-07 Issue:17 Volume:118 Page:175701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ayedh H. M.¹,Hallén A.²,Svensson B. G.¹

Affiliation:

1. University of Oslo, Department of Physics/Center for Materials Science and Nanotechnology, P.O. Box 1048 Blindern, N-0316 Oslo, Norway

2. School of Information and Communication Technology (ICT), Royal Institute of Technology, SE-164 40 Kista-Stockholm, Sweden

Funder

Norges Forskningsråd (Forskningsrådet)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4934947

Reference30 articles.

1. Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation

2. Fundamentals of Silicon Carbide Technology

3. Lifetime-limiting defects in n− 4H-SiC epilayers

4. Investigation of carrier lifetime in 4H-SiC epilayers and lifetime control by electron irradiation

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1. Electromagnetic Thomson parabola spectrometer for detection of fs laser-driven keV ions;AIP Advances;2024-08-01

2. Theoretical modeling of defect diffusion in wide bandgap semiconductors;Journal of Applied Physics;2024-05-02

3. Positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC;Physical Review Materials;2023-09-08

4. Impurities and defects in 4H silicon carbide;Applied Physics Letters;2023-05-01

5. SiC detectors: A review on the use of silicon carbide as radiation detection material;Frontiers in Physics;2022-10-12

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