Lifetime-limiting defects in n− 4H-SiC epilayers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2170144
Reference13 articles.
1. Electrically active defects inn-type 4H–silicon carbide grown in a vertical hot-wall reactor
2. Evaluation of Free Carrier Lifetime and Deep Levels of the Thick 4H-SiC Epilayers
3. Electrical Activity of Residual Boron in Silicon Carbide
4. Negative-Ucenters in 4Hsilicon carbide
5. Radiation-induced defect centers in 4H silicon carbide
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