Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation-Reference-Cited by-同舟云学术

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Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation

Published:2003-09 Issue: Volume:433-436 Page:443-446
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Hatakeyama Tetsuo¹,Watanabe Takatoshi²,Kushibe Mitsuhiro³,Kojima Kazutoshi⁴,Imai Seiji¹,Suzuki Takaya⁵,Shinohe Takashi¹,Tanaka Tomoyuki³,Arai Kazuo⁴

Affiliation:

1. Toshiba Corporation

2. Corporate R&D Center, Toshiba Corporation

3. UPR Ultra-Low-Loss Power Device Technology Research Body

4. National Institute of Advanced Industrial Science and Technology (AIST)

5. National Institute of Advanced Industrial Science and Technology

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.443.pdf

Reference13 articles.

1. D. M. Caughey and R. E. Thomas: Proc. IEEE (1967), p.2192.

2. W. J. Schaffer, G.H. Negley, K. G. Irvine and J.W. Palmour: Mat. Res. Soc. Symp. Proc. Vol. 339. (1994) p.595.

3. G. Wellenhofer and U. Rössler: physica status solidi (b) Vol. 202, (1997) p.107.

4. 8.

5. 9 1.

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