Deep levels in iron doped n- and p-type 4H-SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3669401
Reference36 articles.
1. Formation of semi‐insulating 6H‐SiC layers by vanadium ion implantations
2. Deep level transient spectroscopic and Hall effect investigation of the position of the vanadium acceptor level in 4H and 6H SiC
3. Homoepitaxial growth and electrical characterization of iron-doped semi-insulating 4H-SiC epilayer
4. Microstructural and magnetic study of Fe-implanted 6H-SiC
5. Controllable magnetic property of SiC by anion-cation codoping
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1. Electrically active defects induced by thermal oxidation and post-oxidation annealing of n-type 4H-SiC;Journal of Applied Physics;2024-05-09
2. Understanding Interfaces in AlScN/GaN Heterostructures;Advanced Functional Materials;2024-04-24
3. Metal‐Organic Chemical Vapor Deposition of Aluminum Yttrium Nitride;physica status solidi (RRL) – Rapid Research Letters;2023-04-28
4. Boron-Related Defects in N-Type 4H-SiC Schottky Barrier Diodes;Materials;2023-04-25
5. The diffusion analysis of implanted heavy metals in 4H-SiC;MRS Advances;2022-12-15
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