Carrier lifetime control by intentional boron doping in aluminum doped p-type 4H-SiC epilayers-Reference-Cited by-同舟云学术

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Carrier lifetime control by intentional boron doping in aluminum doped p-type 4H-SiC epilayers

Published:2021-01-14 Issue:2 Volume:129 Page:025702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Murata K.¹^ORCID,Tawara T.²³,Yang A.¹^ORCID,Takanashi R.¹,Miyazawa T.¹,Tsuchida H.¹

Affiliation:

1. Central Research Institute of Electric Power Industry (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, Japan

2. National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

3. Fuji Electric Co., Ltd., 4-18-1 Tsukama, Matsumoto, Nagano 390-0821, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0030011

Reference23 articles.

1. Fundamentals of Silicon Carbide Technology

2. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes

3. Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide p-i-n diodes

4. Degradation of hexagonal silicon-carbide-based bipolar devices

5. Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances and challenges in 4H silicon carbide: defects and impurities;Physica Scripta;2024-08-01

2. Surface recombination velocities for 4H–SiC: Dependence of excited carrier concentration and surface passivation;Materials Science in Semiconductor Processing;2024-02

3. Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective;Japanese Journal of Applied Physics;2024-01-15

4. Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions;Japanese Journal of Applied Physics;2024-01-01

5. Analysis of carrier lifetime in a drift layer of 1.2-kV class 4H–SiC devices toward complete suppression of bipolar degradation;Materials Science in Semiconductor Processing;2023-01

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