High-speed homoepitaxy of SiC from methyltrichlorosilane by chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
2. Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications
3. 4H-SiC Epitaxial Growth for High-Power Devices
4. Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor
5. In situObservation of Clusters in Gas Phase during 4H-SiC Epitaxial Growth by Chemical Vapor Deposition Method
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1. Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor;2024
2. Effect of the N-Doping Concentration on the Formation of the Wide Carrot Defect in 4h-Sic Homoepitaxial Layer Grown by Trichlorosilane (Tcs) as Silicon Precursor;2024
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5. Structural Controlling of Highly-Oriented Polycrystal 3C-SiC Bulks via Halide CVD;Materials;2019-01-27
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