Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry-Reference-Cited by-同舟云学术

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Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry

Published:2017-05 Issue:3 Volume:35 Page:031201
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Stenberg Pontus¹,Janzén Erik¹,Pedersen Henrik¹

Affiliation:

1. Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping, Sweden

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4979279

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