Electrical transport properties of p-type 4H-SiC-Reference-Cited by-同舟云学术

Electrical transport properties of p-type 4H-SiC

Published:2016-11-15 Issue:4 Volume:214 Page:1600679
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Contreras Sylvie¹,Konczewicz Leszek¹,Arvinte Roxana²,Peyre Hervé¹,Chassagne Thierry²,Zielinski Marcin²,Juillaguet Sandrine¹

Affiliation:

1. Laboratoire Charles Coulomb (L2C); UMR 5221 CNRS-Université de Montpellier; 34095 Montpellier cedex 5 France

2. NOVASiC; Savoie Technolac; 73375 Le Bourget du Lac cedex France

Funder

European Training NETwork

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. Electrical transport inn-type 4H silicon carbide

2. Electrical transport properties of aluminum-implanted 4H–SiC

3. Temperature and doping dependencies of electrical properties in Al-doped 4H-SiC epitaxial layers

4. Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation

5. The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

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