Understanding the Mechanism of SiC Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Developing Routes toward SiC Atomic Layer Deposition (ALD) with Density Functional Theory-Reference-Cited by-同舟云学术

Understanding the Mechanism of SiC Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Developing Routes toward SiC Atomic Layer Deposition (ALD) with Density Functional Theory

Published:2018-04-10 Issue:17 Volume:10 Page:15216-15225
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Filatova Ekaterina A.¹^ORCID,Hausmann Dennis²,Elliott Simon D.¹

Affiliation:

1. Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork, T12R5CP, Ireland

2. Lam Research Corporation, 11361 SW Leveton Drive, Tualatin, Oregon 97062, United States

Funder

Lam Research Corporation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b00794

Reference44 articles.

1. Neudeck, P. G. In The VLSI Handbook, 2nd ed. Chen, W.K., Ed. CRC Press: Boca Raton, FL, 2007; pp 5.1–5.34.

2. Comparison of 4H Silicon Carbide Epitaxial Growths at Various Growth Pressures Using Dicholorosilane and Silane Gases

3. The material quality of CVD-grown SiC using different carbon precursors

4. High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

5. Epitaxial growth of α-SiC layers by chemical vapor deposition technique

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