Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=2/a=021402/pdf
Reference8 articles.
1. High-mobility Si and Ge structures
2. Extremely high electron mobility in Si/SiGe modulation‐doped heterostructures
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4. Electron transport properties of Si/SiGe heterostructures: Measurements and device implications
5. Room‐temperature electron mobility in strained Si/SiGe heterostructures
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1. Molecular Beam Epitaxy of High Mobility Silicon, Silicon Germanium and Germanium Quantum Well Heterostructures;Molecular Beam Epitaxy;2018
2. Thermal broadening of electron mobility distribution in AlGaN/AlN/GaN heterostructures;Journal of Applied Physics;2013-08-07
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4. Dependence of the hall factor on the shape of the constant energy surfaces in n-type Si/SiGe quantum-well structures;Journal of the Korean Physical Society;2012-09
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