Room‐temperature electron mobility in strained Si/SiGe heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110045
Reference14 articles.
1. Strain-Induced Two-Dimensional Electron Gas in Selectively DopedSi/SixGe1−xSuperlattices
2. High electron mobility in modulation‐doped Si/SiGe
3. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
4. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
5. Charge transfer and low‐temperature electron mobility in a strained Si layer in relaxed Si1−xGex
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