Thermal broadening of electron mobility distribution in AlGaN/AlN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4813866
Reference22 articles.
1. Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
2. High performances III-Nitride Quantum Dot infrared photodetector operating at room temperature
3. SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors
4. AlxGa1−xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures
5. Scattering analysis of 2DEG carrier extracted by QMSA in undoped Al0.25Ga0.75N/GaN heterostructures
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1. Hole-Confined Polar Optical Phonon Interaction in Al0.35Ga0.65As/GaAs/Al0.25Ga0.75As Quantum Wells;Advances in Science, Technology and Engineering Systems Journal;2022-05
2. Inversion layer electron mobility distribution in fully-depleted silicon-on-insulator MOSFETs;Solid-State Electronics;2021-05
3. Thermal broadening of the electron mobility distribution in FD-SOI MOSFETs;2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS);2020-09-01
4. Investigating the effects of capping layer on optical gain of nitride based semiconductor nanostructure lasers;Optical Materials;2017-04
5. Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors;Journal of Applied Physics;2016-06-14
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