SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3696641
Reference15 articles.
1. Effects of partially occupied sub-bands on two-dimensional electron mobility in AlxGa1−xN/GaN heterostructures
2. Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN∕GaN heterostructure field-effect transistors
3. The physical process analysis of the capacitance—voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors
4. Analysis of thin AlN carrier exclusion layers in AlGaN/GaN microwave heterojunction field-effect transistors
5. The influence of 1nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure
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3. SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy;Scientific Reports;2020-07-21
4. Interface charge engineering in down-scaled AlGaN (<6 nm)/GaN heterostructure for fabrication of GaN-based power HEMTs and MIS-HEMTs;Applied Physics Letters;2020-03-09
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