Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN∕GaN heterostructure field-effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2218759
Reference28 articles.
1. The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
2. Undoped AlGaN/GaN HEMTs for microwave power amplification
3. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
4. Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with SiO2, Si3N4, and silicon oxynitride
5. Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
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2. Investigation of threshold voltage shift and gate leakage mechanisms in normally off AlN/Al0.05Ga0.95N HEMTs on Si substrate;AIP Advances;2020-11-01
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