The physical process analysis of the capacitance—voltage characteristics of AlGaN/AlN/GaN high electron mobility transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Reference18 articles.
1. High electron mobility transistors based on the AlN/GaN heterojunction
2. Large zero-field spin splitting in AlGaN/AlN/GaN/AlN heterostructures
3. Capacitance–Voltage Spectroscopy of Trapping States in GaN/AlGaN Heterostructure Field-Effect Transistors
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2. Calibration of Polarization Fields and Electro-Optical Response of Group-III Nitride Based c-Plane Quantum-Well Heterostructures by Application of Electro-Modulation Techniques;Applied Sciences;2019-12-27
3. Improvement of transconductance and cut-off frequency in $$\hbox {In}_{0.1}\hbox {Ga}_{0.9}\hbox {N}$$ back-barrier-based double-channel Al$$_{0.3}$$Ga$$_{0.7}$$N / GaN high electron mobility transistor by enhancing the drain source contact length ratio;Pramana;2019-12-18
4. Schottky Diodes on Heterostructures with Two-Dimensional Electron Gas;Russian Physics Journal;2019-04
5. Impact of AlN Interlayer's in Epitaxial and Passivation Scheme on the DC and Microwave Performance of Doping-Less GaN HEMT;Journal of Nanoelectronics and Optoelectronics;2018-07-01
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