Improvement of transconductance and cut-off frequency in $$\hbox {In}_{0.1}\hbox {Ga}_{0.9}\hbox {N}$$ back-barrier-based double-channel Al$$_{0.3}$$Ga$$_{0.7}$$N / GaN high electron mobility transistor by enhancing the drain source contact length ratio-Reference-Cited by-同舟云学术

Improvement of transconductance and cut-off frequency in $$\hbox {In}_{0.1}\hbox {Ga}_{0.9}\hbox {N}$$ back-barrier-based double-channel Al$$_{0.3}$$Ga$$_{0.7}$$N / GaN high electron mobility transistor by enhancing the drain source contact length ratio

Published:2019-12-18 Issue:1 Volume:94 Page:
ISSN:0304-4289
Container-title:Pramana
language:en
Short-container-title:Pramana - J Phys

Author:

Mohapatra Rachita,Dutta Pradipta^ORCID

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s12043-019-1866-4.pdf

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