Potential performance of SiC and GaN based metal semiconductor field effect transistors
Author:
Publisher
FapUNIFESP (SciELO)
Subject
General Physics and Astronomy
Link
http://www.scielo.br/pdf/bjp/v39n1/a06v39n1.pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of Passivation Layers Permittivity on DC and RF Parameters of GaN MESFETs;Indian Journal of Pure & Applied Physics;2023
2. Improvement of transconductance and cut-off frequency in $$\hbox {In}_{0.1}\hbox {Ga}_{0.9}\hbox {N}$$ back-barrier-based double-channel Al$$_{0.3}$$Ga$$_{0.7}$$N / GaN high electron mobility transistor by enhancing the drain source contact length ratio;Pramana;2019-12-18
3. Review of using gallium nitride for ionizing radiation detection;Applied Physics Reviews;2015-09
4. A novel symmetric GaN MESFET by dual extra layers of Si3N4;Physica E: Low-dimensional Systems and Nanostructures;2015-06
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