Author:
Ramezani Zeinab,Orouji Ali A.,Aminbeidokhti Amirhossein
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference18 articles.
1. Simulation of electron transport in GaN Based MESFET using Monte Carlo method,;Sayah;World Appl. Progr.,2012
2. A novel 4H-SiC MESFET with modified channel depletion region for high power and high frequency applications;Aminbeidokhti;Phys. E: Low-Dimens. Syst. Nanostruct.,2011
3. MESFETs made from individual GaN nanowires,;Blanchard;IEEE Trans. Nanotechnol.,2008
4. Improving self heating effect and maximum power density in SOI MESFETs by using the Hole's well under channel;Ramezani;IEEE Trans. Electron Devices,2014
5. A.S. Shanta, D.B. Hossain, T.R. Huq, R. Mahmood, M.S. Islam, Analytical model of GaN MESFETs for high power and microwave frequency applications, in: Proceedings of the IEEE International Symposium on Instrumentation and Measurement, Sensor Network and Automation (IMSNA), vol.1, 2012, pp. 28–31.
Cited by
20 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献