1. K. Yuk, G.R. Branner, C. Wong, High power, high conversion gain frequency doublers using SiC MESFETs and AlGaN/GaN HEMTs, in: Proceedings of the IEEE Microwave Theory and Techniques Society (MTT-S), International Microwave Symposium (IMS), 2010, pp. 1008–1011.
2. M. Weber, Analysis of Zincblende-Phase GaN, Cubic-Phase SiC, and GaAs MESFETs Including a Full-Band Monte Carlo Simulator, Ph.D. Dissertation, Department of Electronic Engineering, Georgia Institute of Technology, Georgia, United States, 2005.
3. W. Huang, Y. Guo, R. Xu, Y. Zhang, A novel 3D active channel high power 4H–SiC MESFETs with improved breakdown characteristic, in: Proceedings of the 2006 APMC, 2006, pp. 2363–2366.
4. Simulation of high-power 4H-SiC MESFETs with 3D tri-gate structure