Embedded metal and L-shaped oxide layers in silicon on insulator MESFETs: higher electric field tolerance and lower high frequency gate capacitances
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Link
https://link.springer.com/content/pdf/10.1007/s10854-022-08816-3.pdf
Reference28 articles.
1. A. Naderi, F. Heirani, Improvement in the performance of SOI- MESFETs by T-shaped oxide part at channel region: DC and RF characteristics. Superlattices Microstruct. 111, 1022–1033 (2017)
2. M.K. Anvarifard, An impressive structure containing triple trenches for RF power performance (TT-SOI-MESFET). J. Comput. Electron. 17(1), 230–237 (2018)
3. J. Watson, G. Castro, A review of high-temperature electronics technology and applications. J. Mater. Sci.: Mater. Electron. 26(12), 9226–9235 (2015)
4. A.A. Orouji, H. Shahnazarisani, M.K. Anvarifard, Simulation analysis of a novel dual-trench structure for a high power silicon-on-insulator metal– semiconductor field effect transistor. Mater. Sci. Semicond. Process. 26, 506–511 (2014)
5. M.H. Sani, S. Khosroabadi, Improving thermal effects and reduction of self-heating phenomenon in AlGaN/GaN/Si based HEMT. J. Electron. Mater. 50(4), 2295–2304 (2021)
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