Simulation analysis of a novel dual-trench structure for a high power silicon-on-insulator metal–semiconductor field effect transistor-Reference-Cited by-同舟云学术

Simulation analysis of a novel dual-trench structure for a high power silicon-on-insulator metal–semiconductor field effect transistor

Published:2014-10 Issue: Volume:26 Page:506-511
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Orouji Ali A.,Shahnazarisani Hadi,Anvarifard Mohammad K.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Physics and Semiconductor Technology;Grove,1967

2. A two-dimensional analytical model of subthreshold behavior to study the scaling capability of deep submicron double-gate GaN-MESFETs

3. N. Lakhdar, F. Djeffal, M.A. Abdi, D. Arar LEA, Eleventh International Workshop on Symbolic and Numerical Methods, 2010, 978-1-4244-6817-1/10/$26.00.

4. Electrical Characterization of SOI Materials and Devices;Cristoloveanu,1995

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimizing SOI-MESFET transistor performance at high frequencies by air-oxide layers in the channel and a nickel layer in the box;Physics Open;2024-05

2. Shifting of Gate Near Source Region of SOI-MESFET: A New Approach Towards Improvement of RF Parameters;2023

3. Embedded metal and L-shaped oxide layers in silicon on insulator MESFETs: higher electric field tolerance and lower high frequency gate capacitances;Journal of Materials Science: Materials in Electronics;2022-08-04

4. Analysis of Band Alignment Engineering and Interface Defects on a GaAs/GaSb Heterostructure Solar Cell;physica status solidi (a);2022-05-05

5. Shifted gate electrode of silicon on insulator metal semiconductor FETs to amend the breakdown and transconductance;The European Physical Journal Plus;2021-06