Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modelling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference22 articles.
1. Udrea, F., Garner, D., Sheng, K., Popescu, A., Lim, H.T., Milne, V.I.: SOI power devices. Electron. Commun. Eng. J. 12(1), 27–40 (2000). doi:
10.1049/ecej:20000104
2. Colinge, J.P.: Thin-film SOI technology: the solution to many submicron CMOS problems. In: Electron Devices Meeting, IEDM’89. Technical Digest., International. IEEE, pp. 817–820 (1989). doi:
10.1109/IEDM.1989.74178
3. Jamali Mahabadi, S.E.: Upper drift region double step partial SOI LDMOSFET: a novel device for enhancing breakdown voltage and output characteristics. Superlattices Microstruct. 89, 345–354 (2016). doi:
10.1016/j.spmi.2015.11.011
4. Jamali Mahabadi, S.E., Rajabi, S., Loiacono, J.: A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement. Superlattices Microstruct. 85, 872–879 (2015). doi:
10.1016/j.spmi.2015.07.011
5. Weber, M.: Analysis of Zincblende-Phase GaN, Cubic-Phase SiC, and GaAs MESFETs Including a Full-Band Monte Carlo Simulator. Georgia Inst. Technol, Atlanta (2005)
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