A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

Author:

Jamali Mahabadi S.E.,Rajabi Saba,Loiacono Julian

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference36 articles.

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2. Progress in silicon RF power MOS technologies–current and future trends;De Souza;Proceedings of the Fourth IEEE International Caracas Conference on Devices, Circ. Syst.,2002

3. Realizing high breakdown voltages (>600V) in partial SOI technology;Tadikonda;Solid State Electron.,2004

4. LDMOS in SOI technology with very-thin silicon film;Bawedin;Solid State Electron.,2004

5. New thin-film power MOSFETs with a buried oxide double step structure;Duan;IEEE Electron Dev. Lett.,2006

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