Improved SOI-MESFET structures for enhanced efficiency and optimized DC/RF characteristics-Reference-Cited by-同舟云学术

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Improved SOI-MESFET structures for enhanced efficiency and optimized DC/RF characteristics

Published:2023-10-06 Issue: Volume: Page:1-21
ISSN:0020-7217
Container-title:International Journal of Electronics
language:en
Short-container-title:International Journal of Electronics

Author:

Ghiasi Ahmad¹,Yahya Salah I.²³^ORCID,Rezaei Abbas¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Kermanshah University of Technology, Kermanshah, Iran

2. Department of Communication and Computer Engineering, Cihan University-Erbil, Erbil, Iraq

3. Department of Software Engineering, Faculty of Engineering, Koya University, Koya, Iraq

Publisher

Informa UK Limited

Subject

Electrical and Electronic Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/00207217.2023.2267212

Reference23 articles.

1. A novel metal–semiconductor device to enhance the current and unilateral power gains and 0 dB frequencies by SiO2 insertion in drift region

2. Increase in the scattering of electric field lines in a new high voltage SOI MESFET

3. An impressive structure containing triple trenches for RF power performance (TT-SOI-MESFET)

4. Atlas, D. S. (2005). Atlas User’s manual, Silvaco International Software. Santa Clara.

5. A simplified 2-D analytic model for the threshold-voltage of fully depleted short gate-length si-SOI MESFET’s;Cao J. G.;IEEE Transactions on Electron Devices,1996

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