Increase in the scattering of electric field lines in a new high voltage SOI MESFET
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference39 articles.
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5. Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs;Ning;Microelectron. Reliab.,2013
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