Triple-metal gate work function engineering to improve the performance of junctionless cylindrical gate-all-around Si nanowire MOSFETs for the upcoming sub-3-nm technology node-Reference-Cited by-同舟云学术

Triple-metal gate work function engineering to improve the performance of junctionless cylindrical gate-all-around Si nanowire MOSFETs for the upcoming sub-3-nm technology node

Published:2024-04 Issue:2 Volume:23 Page:267-278
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Sanjay ^ORCID,Kumar Vibhor^ORCID,Vohra Anil^ORCID

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s10825-024-02148-7.pdf

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