Improvement in the performance of SOI-MESFETs by T-shaped oxide part at channel region: DC and RF characteristics
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference23 articles.
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3. CMOS-compatible SOI MESFETs with high breakdown voltage;Ervin;IEEE Trans. Electron Devices,2006
4. A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement;Saremi;Microelectron. Reliab.,2011
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2. Enhanced performance of SOI MESFETs by displacement of gate contact and applying double oxide packets;Electrical Engineering;2023-05-13
3. Introducing a buried pure silicon layer in SOI-MESFET transistor to increase the breakdown voltage by modifying carriers and electric field distribution;Emergent Materials;2023-02-20
4. Shifting of Gate Near Source Region of SOI-MESFET: A New Approach Towards Improvement of RF Parameters;2023
5. A novel metal–semiconductor device to enhance the current and unilateral power gains and 0 dB frequencies by SiO2 insertion in drift region;Materials Science and Engineering: B;2022-09
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