A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement-Reference-Cited by-同舟云学术

A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement

Published:2011-12 Issue:12 Volume:51 Page:2069-2076
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Saremi Mehdi,Ebrahimi Behzad,Afzali-Kusha Ali,Mohammadi Saeed

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Silicon-on-insulator devices for high voltage and power IC applications;Arnold;J Electrochem Soc,1994

2. Smart power ICs;Murari,1996

3. A new partial-SOI LDMOSFET with modified electric field for breakdown voltage improvement;Orouji;IEEE Trans Dev Mater Reliab,2009

4. Efland TR, Tsai CY, Pendharkar S. Lateral thinking about power device (LDMOS). In: IEDM tech dig; 1998. p. 679–82.

5. Zitouni M, Morancho F, Rossel P, Tranduc H, Buxo J, Pages I. A new concept for the lateral DMOS transistor for smart power ICs. In: Proc 11th ISPSD; 1999. p. 73–6.

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