Three-point I–V spectroscopy deconvolves region-specific degradations in LDMOS transistors
Author:
Affiliation:
1. Department of ECE, Purdue University, West Lafayette, Indiana 47906, USA
2. Texas Instruments Inc., Dallas, Texas 75043, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0058477
Reference19 articles.
1. SOI LDMOSFET with Up and Down Extended Stepped Drift Region
2. A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvement
3. On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stress
4. A Novel ‘I-V Spectroscopy’ Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors
5. A Device-to-System Perspective Regarding Self-Heating Enhanced Hot Carrier Degradation in Modern Field-Effect Transistors: A Topical Review
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