Correlated Effects of Radiation and Hot Carrier Degradation on the Performance of LDMOS Transistors
Author:
Affiliation:
1. Purdue University,Elmore Family School of Electrical and Computer Engineering,West Lafayette,IN,United States,47906
2. Purdue University,School of Materials Engineering,West Lafayette,IN,United States,47906
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764450.pdf?arnumber=9764450
Reference15 articles.
1. Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors Using a Novel Charge Pumping Technique
2. A Novel ‘I-V Spectroscopy’ Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors
3. A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors
4. Three-point I–V spectroscopy deconvolves region-specific degradations in LDMOS transistors
5. On the Universality of Hot Carrier Degradation: Multiple Probes, Various Operating Regimes, and Different MOSFET Architectures
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1. A comprehensive analysis of LDMOS transistors for analog applications under γ-radiation;Microelectronics Reliability;2023-09
2. Comprehensive study of the radiation effects on the LDMOS transistors;Microelectronics Reliability;2022-12
3. Detailed total ionizing dose effects on LDMOS transistors;Microelectronics Reliability;2022-09
4. A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03
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