Improved 4H-SiC MESFET with Partially Undoped Region and Tortuous Channel

Author:

Jia Hujun,Wang Xiaojie,Shen Yangyi,Zhao Linna,Su Qiyu,Yang Yintang

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Trew RJ (2000) Wide bandgap semiconductor transistors for microwave power amplifiers. IEEE Microwave Mag 1(1):46–54

2. Trew RJ (1997) The operation of microwave power amplifiers fabricated from wide bandgap semiconductors[C]//1997 IEEE MTT-S International Microwave Symposium Digest. IEEE 1:45–48

3. Milligan J W, Sheppard S, Pribble W et al (2007) SiC and GaN wide bandgap device technology overview[C]//2007 IEEE Radar Conference. IEEE 960–964

4. Trew RJ (2002) SiC and GaN transistors-is there one winner for microwave power applications? Proc IEEE 90(6):1032–1047

5. Palmour JW, Milligan JW, Henning J, Allen ST, Ward A, Parikh P, Smith RP, Saxler A, Moore M, & Wu, Y (2004) SiC and GaN based transistor and circuit advances

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