SiC and GaN Wide Bandgap Device Technology Overview-Reference-Cited by-同舟云学术

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SiC and GaN Wide Bandgap Device Technology Overview

Published:2007-04 Issue: Volume: Page:
ISSN:1097-5659
Container-title:2007 IEEE Radar Conference
language:
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Author:

Milligan J. W.,Sheppard S.,Pribble W.,Wu Y.-F.,Muller G.,Palmour J. W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4250266/4250267/04250443.pdf?arnumber=4250443

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inverter With Paralleled Modules to Extend Current Capacity and Combat Motor Overvoltage in SiC-Based Adjustable Speed Drives;IEEE Transactions on Industrial Electronics;2024-05

2. Room temperature optically detected magnetic resonance of single spins in GaN;Nature Materials;2024-02-12

3. Improved 4H-SiC MESFET with Partially Undoped Region and Tortuous Channel;Silicon;2023-08-09

4. Silicon Carbide Power Devices: Progress and Future Outlook;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-06

5. Optimization of Dual Field Plate AlGaN/GaN HEMTs Using Artificial Neural Networks and Particle Swarm Optimization Algorithm;IEEE Transactions on Device and Materials Reliability;2023-06

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