Silicon Carbide Power Devices: Progress and Future Outlook
Author:
Affiliation:
1. Department of Electrical and Computer Engineering (ECE), North Carolina State University (NCSU), Raleigh, NC, USA
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Energy Engineering and Power Technology
Link
http://xplorestaging.ieee.org/ielx7/6245517/10149883/10072398.pdf?arnumber=10072398
Reference105 articles.
1. 2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
2. Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation
3. Demonstration of high voltage (15 kV) split-gate 4H-SiC MOSFETs;lynch;Proc IEEE 12th Workshop Wide Bandgap Power Devices Appl,2021
4. Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices
5. Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness
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