Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness-Reference-Cited by-同舟云学术

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Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

Published:2021 Issue: Volume:9 Page:79-88
ISSN:2168-6734
Container-title:IEEE Journal of the Electron Devices Society
language:
Short-container-title:IEEE J. Electron Devices Soc.

Author:

Agarwal Aditi^ORCID,Han Kijeong^ORCID,Baliga B. J.^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology

Link

http://xplorestaging.ieee.org/ielx7/6245494/9359727/09270278.pdf?arnumber=9270278

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison and analysis on static and dynamic performance of 1.2-kV SiC planar MOSFETs with different cell topologies;Materials Science in Semiconductor Processing;2024-12

2. High-temperature Electrical Characteristics of JBS-integrated 4H-SiC MOSFETs;2023 IEEE 18th Conference on Industrial Electronics and Applications (ICIEA);2023-08-18

3. Silicon Carbide Power Devices: Progress and Future Outlook;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-06

4. Comparative Study on High-temperature Electrical Properties of 1.2 kV SiC MOSFET and JBS-integrated MOSFET;IEEE Transactions on Power Electronics;2023

5. A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching;Materials;2022-09-27

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