2.3 kV 4H-SiC Accumulation-Channel Split-Gate Planar Power MOSFETs With Reduced Gate Charge
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials,Biotechnology
Link
http://xplorestaging.ieee.org/ielx7/6245494/8949832/09081981.pdf?arnumber=9081981
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 1.2 kV SiC MOSFETs with tapered buffer oxide for the suppression of the electric field crowding effect;Japanese Journal of Applied Physics;2023-11-01
2. Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness;Electronics;2023-06-05
3. Silicon Carbide Power Devices: Progress and Future Outlook;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-06
4. Investigation of Switching and Figure of Merits in New Charge Balanced n-Vertical Trench Epilayer p⁺ -Shield Super Junction Accumulation Mode MOSFET;2022 IEEE Industrial Electronics and Applications Conference (IEACon);2022-10-03
5. 1.2 kV 4H‐SiC planar power MOSFETs with a low‐K dielectric in central gate;IET Circuits, Devices & Systems;2022-03-30
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