Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness

Author:

Liu Hao1ORCID,Wei Jiaxing1ORCID,Wei Zhaoxiang1ORCID,Liu Siyang1,Shi Longxing1

Affiliation:

1. National ASIC System Engineering Research Center, School of Electronic Science and Engineering, Southeast University, Nanjing 211189, China

Abstract

In this paper, we compare a new 1.2 kV rated 4H-SiC split-gate (SG) MOSFET with the conventional planar-gate (PG) MOSFETs. Both structures were fabricated with the same design rules and process platform. Therefore, the structures have similar electrical parameters, such as ON-state drain-source resistance (RON), breakdown voltage (BV), threshold voltage (Vth), and body diode forward voltage (VSD). It is shown that the Ciss/Coss/Crss capacitances of the SG-MOSFET can be reduced by 7%/8%/17%, respectively, compared with PG-MOSFET. It is also shown that the SG-MOSFET has the potential to reduce switching losses without compromising the static performance. Moreover, it maintains the robustness of the device, and an optimized layout design with spaced holes in the gate poly is adopted. Therefore, there is no obvious degradation between the SG-MOSFET and the PG-MOSFET in terms of avalanche and short-circuit endurance capabilities.

Funder

National Natural Science Foundation of China

Fund for Transformation of Scientific and Technological Achievements of Jiangsu Province

Research and Development Plan of Jiangsu Province

Important Special Project of Nanjing City

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering

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