Investigation of Switching and Figure of Merits in New Charge Balanced n-Vertical Trench Epilayer p⁺ -Shield Super Junction Accumulation Mode MOSFET-Reference-Cited by-同舟云学术

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Investigation of Switching and Figure of Merits in New Charge Balanced n-Vertical Trench Epilayer p⁺ -Shield Super Junction Accumulation Mode MOSFET

Published:2022-10-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Industrial Electronics and Applications Conference (IEACon)
language:
Short-container-title:

Author:

Lodhi Md Ejaz Aslam¹,Loan Sajad Ahmad²,Ansari Abdul Quaiyum³

Affiliation:

1. Indira Gandhi Delhi Technical University for Women,Department of Electronics and Communication Engineering,New Delhi,India

2. Jamia Millia Islamia,Department of Electronics and communication Engineering,New Delhi,India

3. Jamia Millia Islamia,Department of Electrical Engineering,New Delhi,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9951708/9951713/09951835.pdf?arnumber=9951835

Reference26 articles.

1. New n-Vertical Trench Epilayer P?Shield Accumulation Mode MOSFET with Enhanced Switching and FOMs;lodhi;2nd ASIANCON,2022

2. SiC Integrated MOSFETs

3. A New Generation of High Voltage Power MOSFETs breaks the Limit line of Silicon;deboy;IEDM 1998,0

4. Influence of the trench corner design on edge termination of UMOS power devices

5. An overview of smart power technology

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