Influence of the trench corner design on edge termination of UMOS power devices-Reference-Cited by-同舟云学术

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Influence of the trench corner design on edge termination of UMOS power devices

Published:1997-12 Issue:12 Volume:41 Page:1929-1936
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Thapar Naresh,Baliga B.Jayant

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Power Semiconductor devices;Baliga,1995

2. Proc. IEEE Int. Symp. Power Semiconductor Devices and IC's;Thapar,1996

3. Technology Modelling Associates, MEDICI Owners Manual.

4. Proc. IEEE Int. Symp. Power Semiconductor Devices and IC's;Matsushita,1995

5. Proc. IEEE Int. Symp. Power Semiconductor Devices and IC's;Udrea,1995

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