1. Fundamentals of Power Semiconductor Devices;Baliga,2019
2. Closed form analytical solutions for the breakdown voltage of planar junctions terminated with a single floating field ring;Baliga;Solid State Electron.,1990
3. Investigation on 3.3kV-50A IGBT protection against over-voltage conditions;Flores,2009
4. Influence of the trench corner design on edge termination of UMOS power devices;Thapar;Solid State Electron.,1997
5. Current sensing trench power MOSFET for automotive applications;Xiao,2005