SiC Integrated MOSFETs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Investigation of Switching and Figure of Merits in New Charge Balanced n-Vertical Trench Epilayer p⁺ -Shield Super Junction Accumulation Mode MOSFET;2022 IEEE Industrial Electronics and Applications Conference (IEACon);2022-10-03
2. New n-Vertical Trench Epilayer P+ -Shield Accumulation Mode MOSFET with Enhanced Switching and FOMs;2022 2nd Asian Conference on Innovation in Technology (ASIANCON);2022-08-26
3. Gate Capacitance and Conductance-Voltage Characteristics of Vertical 4H-SiC MOSFETs;Materials Science Forum;2020-07
4. Evaluation of Schottky barrier height on 4H-SiC m-face $\{ 1\bar{1}00\} $ for Schottky barrier diode wall integrated trench MOSFET;Japanese Journal of Applied Physics;2017-03-07
5. Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate;Applied Physics Letters;2016-07-18
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