Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices-Reference-Cited by-同舟云学术

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Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices

Published:2021-03 Issue:3 Volume:36 Page:3335-3345
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Agarwal Aditi^ORCID,Kanale Ajit^ORCID,Baliga B. Jayant^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9240073/09170805.pdf?arnumber=9170805

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of parasitic elements on the power dissipation of Si superjunction MOSFETs, SiC MOSFETs, and GaN HEMTs;Engineering Research Express;2023-09-01

2. A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching;Micromachines;2023-06-22

3. Silicon Carbide Power Devices: Progress and Future Outlook;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-06

4. High-Performance Driving of SiC MOSFETs to Implement Short-Time Operation for Inverter Circuits;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

5. A Solid-State Bipolar Pulse Power Generator for Dielectric Barrier Discharge Applications;IEEE Transactions on Industry Applications;2022-11

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