High-Performance Driving of SiC MOSFETs to Implement Short-Time Operation for Inverter Circuits
Author:
Affiliation:
1. Chiba Institute of Technology,Japan
2. Tokyo Metropolitan University,Japan
Funder
Japan Society for the Promotion of Science
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10213399/10213452/10213644.pdf?arnumber=10213644
Reference23 articles.
1. Guideline for Switching Reliability Evaluation Procedures for Gallium Nitride Power Conversion Devices;Joint Electron Device Engineering Council,2020
2. Semiconductor devices - Discrete devices - Part 8: Field-effect transistors;International Electrotechnical Commission,2010
3. Accelerated aging for gate oxide of SiC MOSFETs under continuous switching conditions by applying advanced HTGB test
4. Advanced 650 V SiC Power MOSFETs With 10 V Gate Drive Compatible With Si Superjunction Devices
5. Test Method for Continuous-Switching Evaluation of Gallium Nitride Power Conversion Devices;Joint Electron Device Engineering Council,2021
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1. Reliability under High Gate-Voltage Condition on SiC MOSFET Through Repeated Overcurrent;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
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