Evaluation of Temperature-Humidity-Reverse Bias Robustness of 3<sup>rd</sup> Generation 650V Class 4H-SiC Discrete Power MOSFET Devices-Reference-Cited by-同舟云学术

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Evaluation of Temperature-Humidity-Reverse Bias Robustness of 3^rd Generation 650V Class 4H-SiC Discrete Power MOSFET Devices

Published:2023-10-08 Issue: Volume: Page:1-6
ISSN:
Container-title:2023 IEEE International Integrated Reliability Workshop (IIRW)
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Author:

Waseem Muhammad¹,Ibrahim Mesfin Seid²,Abbas Waseem²,Lu Chang²,Yuluo Hou²,Lee Hiu Hung²,Hao Zhang³,Loo Ka-Hong¹

Affiliation:

1. The Hong Kong Polytechnic University,Department of Electrical and Electronic Engineering,Hung Hom,Hong Kong SAR

2. Centre for Advances in Reliability and Safety,New Territories,Hong Kong SAR

3. Songshan Lake Materials Laboratory,Dongguan City,China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10477668/10477631/10477692.pdf?arnumber=10477692

Reference11 articles.

1. Gate Oxide Reliability of 4H-SiC MOSFETs;Liu,2022

2. Field-Experience Based Root-Cause Analysis of Power-Converter Failure in Wind Turbines

3. The influence of humidity on the high voltage blocking reliability of power IGBT modules and means of protection

4. High Humidity, High Temperature and High Voltage Reverse Bias -A Relevant Test for Industrial Applications;Jormanainen

5. Influence of Humidity on the Power Cycling Lifetime of SiC MOSFETs

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