Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors-Reference-Cited by-同舟云学术

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Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistors

Published:2016-06-14 Issue:22 Volume:119 Page:224501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yang Ming¹,Lv Yuanjie²,Feng Zhihong²,Lin Wei³,Cui Peng¹,Liu Yan¹,Fu Chen¹,Lin Zhaojun¹^ORCID

Affiliation:

1. School of Physics, Shandong University, Jinan 250100, China

2. National Key Laboratory of Application Specific Integrated Circuit (ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

3. Department of Physics, University of Alberta, Edmonton T6G 2R3, Canada

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4953645

Reference31 articles.

1. A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz

2. AlGaN/GaN HEMT With 300-GHz $f_{\max}$

3. Influence of the Dynamic Access Resistance in the$g_m$and$f_T$Linearity of AlGaN/GaN HEMTs

4. Effect of Optical Phonon Scattering on the Performance of GaN Transistors

5. Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures

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1. Influence of the Bias Voltage on Effective Electron Velocity in AlGaN/GaN High Electron Mobility Transistors;Micromachines;2024-09-13

2. Proton irradiation influence on gate-channel low-field carrier mobility of AlGaN/GaN HEMTs;Semiconductor Science and Technology;2023-07-10

3. Influence of Proton Irradiation Energy on Gate–Channel Low-Field Electron Mobility in AlGaN/GaN HEMTs;Electronics;2023-03-20

4. Study of Drain Access Resistance in Saturation Region of AlGaN/GaN Heterostructure Field-Effect Transistors;IEEE Transactions on Electron Devices;2022-05

5. Temperature dependence of the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN HFETs;Micro and Nanostructures;2022-04

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