Layered boron nitride as a release layer for mechanical transfer of GaN-based devices
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/nature10970.pdf
Reference28 articles.
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2. Nakamura, S. et al. InGaN-based multi-quantum-well-structure laser diodes. Jpn. J. Appl. Phys. 35, L74–L76 (1996)
3. Asif Khan, M., Bhattarai, A., Kuznia, J. N. & Olson, D. T. High electron mobility transistor based on a GaN-AlxGa1-xN heterojunction. Appl. Phys. Lett. 63, 1214–1215 (1993)
4. Wong, W. S., Sand, T. & Cheung, N. W. Damage-free separation of GaN thin films from sapphire substrates. Appl. Phys. Lett. 72, 599–601 (1998)
5. Kelly, M. K. et al. Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced liftoff. Jpn. J. Appl. Phys. 38, L217–L219 (1999)
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