Wafer‐Scale Transfer of MXene Films with Enhanced Device Performance via 2D Liquid Intercalation

Author:

Xu Xiangming1ORCID,Thomas Simil123,Guo Tianchao1,Luo Linqu1,Khan Yusuf1,Yuan Yue1,Elhagrasy Youssef A.14,Lanza Mario5,Anthopoulos Thomas D.16,Bakr Osman M.13,Mohammed Omar F.123,Alshareef Husam N.13ORCID

Affiliation:

1. Materials Science and Engineering Physical Science and Engineering King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi Arabia

2. Advanced Membranes and Porous Materials Center Division of Physical Sciences and Engineering King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi Arabia

3. Center for Renewable Energy and Storage Technologies (CREST) Division of Physical Sciences and Engineering King Abdullah University of Science and Technology (KAUST) Thuwal 23955–6900 Saudi Arabia

4. Engineering Physics University of British Columbia Vancouver Canada

5. Department of Materials Science and Engineering National University of Singapore, Singapore National University of Singapore Singapore 117575 Singapore

6. Henry Royce Institute and Photon Science Institute Department of Electrical and Electronic Engineering The University of Manchester Oxford Road Manchester M13 9PL UK

Abstract

AbstractWafer‐scale transfer processes of 2D materials significantly expand their application space in scalable microelectronic devices with excellent and tunable properties through van der Waals (vdW) stacking. Unlike many 2D materials, wafer‐scale transfer of MXene films for vdW contact engineering has not yet been reported. With their rich surface chemistry and tunable properties, the transfer of MXenes can enable enormous possibilities in electronic devices using interface engineering. Taking advantage of the MXene hydrophilic surface, a straightforward, green, and fast process for the transfer of MXene films at the wafer scale (4‐inch) is developed. Uniform vdW stacking of several types of large‐area heterojunctions including MXene/MXene (Ti3C2Tx, Nb2CTx, and V2CTx), MXene/MoS2, and MXene/Au is further demonstrated. Multilayer support is applied to minimize damage or deformation in the transfer process of patterned Ti3C2Tx film. It allows us to fabricate thin film transistors and manipulate the MXene/MoS2 interface through the intercalation of various 2D liquids. Particularly noteworthy is the significant enhancement of the interfacial carrier transfer efficiency by ≈2 orders of magnitude using hydrogen iodide (HI) intercalation. This finding indicates a wide range of possibilities for interface engineering by transferring MXene films and employing liquid‐assisted interfacial intercalation.

Publisher

Wiley

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