Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials
Link
https://www.nature.com/articles/s41928-022-00764-4.pdf
Reference39 articles.
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3. Mleczko, M. J. et al. Contact engineering high-performance n-type MoTe2 transistors. Nano Lett. 19, 6352–6362 (2019).
4. Cho, K. et al. Contact-engineered electrical properties of MoS2 field-effect transistors via selectively deposited thiol-molecules. Adv. Mater. 30, e1705540 (2018).
5. Wang, T. et al. High-performance WSe2 phototransistors with 2D/2D ohmic contacts. Nano Lett. 18, 2766–2771 (2018).
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