Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate-Reference-Cited by-同舟云学术

Influence of Growth Parameters and Thickness of AlN Spacer on Electrical Properties of AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on 4-Inch Si Substrate

Published:2009-11-20 Issue:11 Volume:48 Page:111002
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Tan Shuxin,Suzue Takaaki,Selvaraj S. Lawrence,Egawa Takashi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference22 articles.

1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

2. High voltage (450 V) GaN Schottky rectifiers

3. Electron transport characteristics of GaN for high temperature device modeling

4. Comparison of high field electron transport in GaN and GaAs

5. Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Suppression of positive bias instability by inserting polarized AlN interlayer at AlSiO/p-type GaN interface in metal–oxide–semiconductor field-effect transistor;Applied Physics Letters;2024-07-08

2. Uniformity and repeatability of InAlN-barrier HEMTs growth by high-speed-rotation single-wafer MOCVD tool;Journal of Crystal Growth;2019-03

3. Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition;Applied Sciences;2017-01-17

4. Growth behavior of hexagonal GaN on Si(100) and Si(111) substrates prepared by pulsed laser deposition;Japanese Journal of Applied Physics;2016-08-02

5. 1.48-kV enhancement-mode AlGaN/GaN high-electron-mobility transistors fabricated on 6-in. silicon by fluoride-based plasma treatment;Japanese Journal of Applied Physics;2016-04-18