Electron transport properties in AlGaN/InGaN/GaN double heterostructures grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1690879
Reference15 articles.
1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. Superior Pinch-Off Characteristics at 400°C in AlGaN/GaN Heterostructure Field Effect Transistors
3. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
4. Progress in High-Power, High Frequency AlGaN/GaN HEMTs
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